Description This device is designed as a general-purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Block Diagram E2 E2 C2 B2 B1 C1 E1 B2 C1 C2 SC70-6 Mark: .1A E1 pin #1 B1 The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier tape can be of either orientation (0 deg and 180 deg) and will not affect the functionality of the device. Figure 1. FFB3904 Device Package Figure 2. FFB3904 Internal Connection C2 E1 C1 B2 E2 C2 B2 E1 E2 C1 B1 pin #1 B1 SuperSOTTM-6 Mark: .1A Dot denotes pin #1 Figure 3. FMB3904 Device Package E1 B1 E2 B2 SOIC-16 E3 B3 E4 pin #1 C1 Figure 4. FMB3904 Internal Connection B4 C2 C1 C3 C2 E1 B1 E2 B2 E3 B3 E4 B4 C1 C1 C2 C2 C3 C3 C4 C4 C4 C4 C3 Mark: MMPQ3904 Figure 5. MMPQ3904 Device Package Figure 6. MMPQ3904 Internal Connection (c) 1998 Semiconductor Components Industries, LLC. December-2017, Rev. 3 1 Publication Order Number: FFB3904/D FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier Part Number Top Mark Package Packing Method FFB3904 .1A SC70 6L Tape and Reel FMB3904 .1A SSOT 6L Tape and Reel MMPQ3904 MMPQ3904 SOIC 16L Tape and Reel Absolute Maximum Ratings(1) Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25C unless otherwise noted. Symbol Parameter Value Unit VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V 200 mA -55 to +150 C IC TJ, TSTG Collector Current - Continuous Operating and Storage Junction Temperature Range Note: 1. These ratings are based on a maximum junction temperature of 150C. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations. Thermal Characteristics(2) Values are at TA = 25C unless otherwise noted. Symbol PD RJA Max. Parameter Unit FFB3904 FMB3904 MMPQ3904 Total Device Dissipation 300 700 1,000 mW Derate above 25C 2.4 5.6 8.0 mW/C Thermal Resistance, Junction to Ambient 415 180 Thermal Resistance, Junction to Ambient, Effective 4 Die 125 Thermal Resistance, Junction to Ambient, Each Die 240 Note: 2. PCB size: FR-4 76 x 114 x 0.6T mm3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. www.onsemi.com 2 C/W FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Ordering Information Values are at TA = 25C unless otherwise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Off Characteristics V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 A, IE = 0 60 V Emitter-Base Breakdown Voltage IE = 10 A, IC = 0 6.0 V Base Cut-Off Current VCE = 30 V, VBE = -3 V 50 nA Collector Cut-Off Current VCE = 30 V, VBE = -3 V 50 nA V(BR)EBO IBL ICEX On Characteristics(3) FFB3904, FMB3904 MMPQ3904 FFB3904, FMB3904 hFE DC Current Gain MMPQ3904 FFB3904, FMB3904 MMPQ3904 IC = 0.1 mA, VCE = 1.0 V IC = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V 40 30 70 50 100 75 All Devices IC = 50 mA, VCE = 1.0 V 60 All Devices IC = 100 mA, VCE = 1.0 V 30 VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage 300 IC = 10 mA, IB = 1.0 mA 0.2 IC = 50 mA, IB = 5.0 mA 0.3 IC = 10 mA, IB = 1.0 mA 0.65 0.85 IC = 50 mA, IB = 5.0 mA 0.95 V V Small-Signal Characteristics (MMPQ3904 only) Current Gain-Bandwidth Product IC = 10 mA, VCE = 20 V, f = 100 MHz 250 MHz Cob Output Capacitance VCB = 5.0 V, IE = 0, f = 140 kHz 4.0 pF Cib Input Capacitance VBE = 0.5 V, IC = 0, f = 140 kHz 8.0 pF fT Note: 3. Pulse test: pulse width 300 s, duty cycle 2.0%. www.onsemi.com 3 FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Electrical Characteristics 125 C 300 25 C 200 - 40 C 100 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 VBESAT- BASE-EMITTER VOLTAGE (V) Figure 7. Typical Pulsed Current Gain vs. Collector Current 1 = 10 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) V CE = 5V 400 0.15 125 C 25 C 0.05 - 40 C 0.1 25 C 0.4 Figure 8. Collector-Emitter Saturation Voltage vs. Collector Current 1 10 - COLLECTOR CURRENT (mA) 100 1 VCE = 5V 125 C 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 10. Base-Emitter On Voltage vs. Collector Current 10 500 f = 1.0 MHz CAPACITANCE (pF) VCB = 30V 10 1 0.1 25 - 40 C 25 C 0.2 0.1 Figure 9. Base-Emitter Saturation Voltage vs. Collector Current 100 100 0.4 125 C 0.1 1 10 I C - COLLECTOR CURRENT (mA) 0.6 0.6 IC ICBO- COLLECTOR CURRENT (nA) - 40 C 0.8 0.8 = 10 0.1 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN 500 50 75 100 125 TA - AMBIENT TEMPERATURE ( C) Figure 11. Collector Cut-Off Current vs. Ambient Temperature 5 4 3 2 C ob 1 0.1 150 Cib 1 10 REVERSE BIAS VOLTAGE (V) 100 Figure 12. Capacitance vs. Reverse Bias Voltage www.onsemi.com 4 FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Typical Performance Characteristics 12 I C = 1.0 mA R S = 200 I C = 1.0 mA NF - NOISE FIGURE (dB) 10 V CE = 5.0V I C = 50 A R S = 1.0 k 8 I C = 0.5 mA R S = 200 6 4 2 I C = 100 A, R S = 500 0 0.1 1 10 f - FREQUENCY (kHz) - CURRENT GAIN (dB) fe h V CE = 40V I C = 10 mA 10 100 f - FREQUENCY (MHz) 6 2 SOIC-16 0.5 SC70 -6 0.25 50 75 100 TE MPE RATURE (C) VCC = 40V t r - RISE TIME (ns) TIME (nS) 25 10 2.0V 100 10 125 150 I B1 = I B2 = Ic 10 T J = 25C T J = 125C 10 t d @ VCB = 0V 10 I C - COLLECTOR CURRENT (mA) 0 500 15V 1 SOT-6 0.75 Figure 16. Power Dissipation vs. Ambient Temperature Ic t r @ V CC = 3.0V 5 100 1 0 40V 100 1 10 R S - SOURCE RESISTANCE ( k ) Figure 14. Noise Figure vs. Source Resistance Figure 15. Current Gain and Phase Angle vs. Frequency I B1 = I B2 = I C = 100 A 4 1000 500 I C = 50 A 0 0.1 - DEGREES 0 20 40 60 80 100 120 140 160 180 h fe 1 I C = 5.0 mA 8 100 Figure 13. Noise Figure vs. Frequency 50 45 40 35 30 25 20 15 10 5 0 10 PD - POWE R DIS SIPATION (W) NF - NOISE FIGURE (dB) 12 5 100 Figure 17. Turn-On Time vs. Collector Current 1 10 I C - COLLECTOR CURRENT (mA) 100 Figure 18. Rise Time vs. Collector Current www.onsemi.com 5 FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Typical Performance Characteristics (Continued) T J = 25C I B1 = I B2 = 500 Ic I B1 = I B2 = 10 t f - FALL TIME (ns) t S - STORAGE TIME (ns) 500 100 T J = 125C T J = 25C 10 1 10 I C - COLLECTOR CURRENT (mA) 5 100 Figure 19. Storage Time vs. Collector Current 100 V CE = 10 V f = 1.0 kHz T A = 25oC 100 10 0.1 1 I C - COLLECTOR CURRENT (mA) 1 10 1 0.1 10 1 I C - COLLECTOR CURRENT (mA) 10 _ h re - VOLTAGE FE EDBACK RATIO (x10 4 ) Figure 22. Output Admittance V CE = 10 V f = 1.0 kHz T A = 25oC 10 1 0.1 0.1 100 V CE = 10 V f = 1.0 kHz T A = 25oC Figure 21. Current Gain 100 10 I C - COLLECTOR CURRENT (mA) Figure 20. Fall Time vs. Collector Current h oe - OUTPUT ADMITTANCE ( mhos) 500 h ie - INPUT IMPEDANCE (k ) VCC = 40V 100 10 5 h fe - CURRENT GAIN T J = 125C Ic 10 1 I C - COLLECTOR CURRENT (mA) 10 10 Figure 23. Input Impedance V CE = 10 V f = 1.0 kHz T A = 25oC 7 5 4 3 2 1 0.1 1 I C - COLLE CTOR CURRENT (mA) Figure 24. Voltage Feedback Ratio www.onsemi.com 6 10 FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Typical Performance Characteristics (Continued) SC70 6L SYMM C L 2.000.20 0.65 A 0.50 MIN 6 4 B PIN ONE 1.250.10 1 1.90 3 0.30 0.15 (0.25) 0.40 MIN 0.10 0.65 A B 1.30 LAND PATTERN RECOMMENDATION 1.30 1.00 0.80 SEE DETAIL A 1.10 0.80 0.10 C 0.10 0.00 C 2.100.30 SEATING PLANE NOTES: UNLESS OTHERWISE SPECIFIED GAGE PLANE (R0.10) 0.25 0.10 0.20 A) THIS PACKAGE CONFORMS TO EIAJ SC-88, 1996. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. D) DRAWING FILENAME: MKT-MAA06AREV6 30 0 0.46 0.26 SCALE: 60X Figure 25. 6-LEAD, SC70, EIAJ SC-88, 1.25 MM WIDE (ACTIVE) www.onsemi.com 7 FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Physical Dimensions SSOT 6L Figure 26. 6-LEAD, SUPERSOT-6, JEDEC MO-193, 1.6 MM WIDE (ACTIVE) www.onsemi.com 8 FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Physical Dimensions (Continued) SO 16L NB 10.00 9.80 A 8.89 16 9 B 4.00 3.80 6.00 PIN ONE INDICATOR 1.75 1 5.6 8 0.51 0.35 1.27 (0.30) 0.25 M 1.27 C B A 0.65 LAND PATTERN RECOMMENDATION 1.75 MAX 1.50 1.25 SEE DETAIL A 0.25 0.10 C 0.25 0.19 0.10 C 0.50 0.25 X 45 NOTES: UNLESS OTHERWISE SPECIFIED (R0.10) GAGE PLANE (R0.10) 0.36 8 0 A) THIS PACKAGE CONFORMS TO JEDEC MS-012, VARIATION AC, ISSUE C. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH AND TIE BAR PROTRUSIONS D) CONFORMS TO ASME Y14.5M-1994 E) LANDPATTERN STANDARD: SOIC127P600X175-16AM F) DRAWING FILE NAME: M16AREV12. SEATING PLANE 0.90 0.50 (1.04) DETAIL A SCALE: 2:1 Figure 27. 16-LEAD, SOIC, JEDEC MS-012, 0.150 inch, NARROW BODY (ACTIVE) www.onsemi.com 9 FFB3904 / FMB3904 / MMPQ3904 -- NPN Multi-Chip General Purpose Amplifier Physical Dimensions (Continued) ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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